SKM25GD125D ? by semikron rev. 1 C 05.12.2012 1 semitrans ? 6 gd igbt modules SKM25GD125D target data features v ce(sat) with positive temperature coefficient high short circuit capability, self limiting to 6 x icnom fast & soft inverse cal diodes large clearance (10 mm) and creepage distances (20 mm) isolated copper baseplate using dbc technology (direct copper bonding) ul recognized, file no. e63532 typical applications* three phase inverters for ac motor speed control pulse frequencies also above 15 khz dc servo and robot drives absolute maximum ratings symbol conditions values unit igbtv ces t j =25c 1200 v i c t j = 150 c t c =25c 39 a t c =80c 27 a i cnom 25 a i crm i crm = 2xi cnom 50 a v ges -20 ... 20 v t psc v cc = 600 v v ge 15 v v ces 1200 v t j =125c 10 s t j -55 ... 150 c inverse diode i f t j = 150 c t c =25c 47 a t c =80c 32 a i fnom 40 a i frm i frm = 2xi fnom 80 a i fsm t p = 10 ms, sin 180, t j =25c 410 a t j -40 ... 150 c module i t(rms) t terminal =80c 100 a t stg -40 ... 125 c v isol ac sinus 50 hz, t = 1 min 4000 v characteristics symbol conditions min. typ. max. unit igbtv ce(sat) i c =25a v ge =15v chiplevel t j =25c 3.20 3.70 v t j =125c 3.60 4.20 v v ce0 chiplevel t j =25c 1.5 1.75 v t j =125c 1.7 1.95 v r ce v ge =15v chiplevel t j =25c 68.00 78.00 m ? t j =125c 76.00 90.00 m ? v ge(th) v ge =v ce , i c = 1 ma 4.5 5.5 6.5 v i ces v ge =0v v ce = 1200 v t j =25c 0.1 0.3 ma ma c ies v ce =25v v ge =0v f=1mhz 1.65 nf c oes f=1mhz 0.25 nf c res f=1mhz 0.11 nf q g v ge = - 8 v...+ 20 v 221 nc r gint t j =25c 0.00 ? t d(on) v cc = 600 v i c =25a v ge =15v r g on =16 ? r g off =16 ? t j =125c 25 ns t r t j =125c 19 ns e on t j =125c 3.9 mj t d(off) t j =125c 184 ns t f t j =125c 8n s e off t j =125c 1.6 mj r th(j-c) per igbt 0.56 k/w
SKM25GD125D 2 rev. 1 C 05.12.2012 ? by semikron characteristics symbol conditions min. typ. max. unit inverse diode v f = v ec i f =40a v ge =0v chiplevel t j =25c 2.13 2.65 v t j =125c 1.94 2.46 v v f0 chiplevel t j =25c 1.1 1.45 v t j =125c 0.85 1.2 v r f chiplevel t j =25c 25.7 30.0 m ? t j =125c 27.1 31.4 m ? i rrm i f =25a di/dt off =2500a/s v ge =15v v cc = 600 v t j =125c 50 a q rr t j =125c 4 c e rr t j =125c 1.1 mj r th(j-c) per diode 1 k/w module l ce 60 nh r cc'+ee' terminal-chip t c =25c m ? t c =125c m ? r th(c-s) per module 0.05 k/w m s to heat sink m6 4 5 nm m t nmnm w 175 g semitrans ? 6 gd igbt modules SKM25GD125D target data features v ce(sat) with positive temperature coefficient high short circuit capability, self limiting to 6 x icnom fast & soft inverse cal diodes large clearance (10 mm) and creepage distances (20 mm) isolated copper baseplate using dbc technology (direct copper bonding) ul recognized, file no. e63532 typical applications* three phase inverters for ac motor speed control pulse frequencies also above 15 khz dc servo and robot drives
SKM25GD125D ? by semikron rev. 1 C 05.12.2012 3 fig. 1: typ. output characteristic, inclusive r cc'+ ee' fig. 2: rated current vs. temperature i c = f (t c ) fig. 3: typ. turn-on /-off energy = f (i c ) fig. 4: typ. turn-on /-off energy = f (r g ) fig. 6: typ. gate charge characteristic fig. 7: typ. switching times vs. i c
SKM25GD125D 4 rev. 1 C 05.12.2012 ? by semikron fig. 8: typ. switching times vs. gate resistor r g fig. 10: typ. cal diode forward charact., incl. r cc'+ ee'
SKM25GD125D ? by semikron rev. 1 C 05.12.2012 5 this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix * the specifications of our components may no t be considered as an assurance of component characteristics. components have to b e tested for the respective application. adjustments may be necessary. the use of semikron produc ts in life support appliances and syste ms is subject to prior specification and written approval by semikron. we therefore strongly recommend prior consultation of our staf f. semitrans 6 gd
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